Oxygen-containing plasma are used to deposit SiO sub 2 and to etch recently developed organic, low dielectric constant (low-k) materials.
Experimental measurements and physical modeling of the tunneling current through ultra-thin gate oxides (1-6 nm) are presented for a large variety of experimental conditions including injection of
Ultrathin epitaxial CoSi sub 2 films on Si(111) have been grown in ultrahigh vacuum by room temperature deposition of Co on Si(111) followed by a high temperature anneal at ~600C.
Micropumps can play a significant role in thermal management applications, as a component of microfluidic cooling systems.
High quality, 2" diameter, MO-CVD GaAs-on-Si wafers grown by direct deposition of 4 um GaAs layers onto Si substrates oriented 2 off (100) - (110).
InAlN/AlN/GaN high electron mobility transistors (HEMT) show interesting performances at level of static characteristics as well as at level of the behavior at microwave frequencies.
In this paper, we consider the multicast throughput optimization problem in multi-hop wireless networks.
This paper considers the problem of determining the achievable rates in multi-hop wireless mesh networks with orthogonal channels.
This paper considers the problem of determining the achievable rates in multi-hop wireless networks with orthogonal channels.
This paper considers the problem of determining the achievable rates in multihop wireless networks.
