Publications

Displaying 51 - 60 of 47506

0.25-μ BiCMOS receivers for normal and micro GSM900 and DCS 1800 base stations

This paper describes two integrated RF receivers with low noise and high linearity for GSM900 and DCS1800 base stations. The chips were fabricated using a 0.25-μm BiCMOS process.

0.25micron Lithography Using KTI 747 Negative Resist For The Trilevel Base-Layer

High resolution lithographic techniques, such as electron beam, x-ray and deep UV lithography, place stringent demand on the resist materials, process and pattern transfer technology.

0.50microns Direct Write Gate Lithography for AlGaAs/GaAs Selectively Doped Heterostructure Transistor Devices

The AlGaAs/GaAs selectively doped heterostructure transistor (SDHT) is ideally suited to a submicron recess etch gate process, since the channel of the FET is confined to a two-dimension electron g

0.5micron Device Processing withe Excimer Laser-Based Lithography

A deep UV projection system has been developed by modifying a commercial step and repeat exposure tool to operate at 248nm with an all-quartz lens and a KrF excimer laser.

0.63u Scatter Measurements from Teflon and Various Metallic Surfaces

A cursory examination of a visible laser beam incident on any refracting or reflecting system will show that energy is scattered from the laser beam.

0.7-um InP DHBT technology with 400-GHz fT and fMAX and 4.5-V BVCE0 for high speed and high frequency integrated circuits

We report the performances of a 0.7-µm InP/GaInAs DHBT developed in III-V Lab demonstrating both fT and fMAX of 400 GHz as well as a high fabrication yield and homogeneity on a 3-inch wafer.

0.8 bit/s/Hz spectral efficiency at 10 Gbit/s via vestigial-sideband filtering

The first 10 Gbit/s DWDM transmission at 12.5 GHz spacing without polarisation division multiplexing or polarisation interleaving is demonstrated.

0.8 Bit/s/Hz Spectral Efficiency at 10Gb/s via Vesitigial-sideband Filtering

We demonstrate the first 10Gb/s DWDM transmission at 12.5GHz spacing without polarization division multiplexing or polarization interleaving.

0.8 Bit/s/Hz Spectral Efficiency at 10Gb/s via Vestigial-sideband Filtering

We demonstrate the first 10Gb/s DWDM transmission at 12.5GHz spacing without polarization division multiplexing or polarization interleaving.

0.8-bit/s/Hz Terabit Transmission at 42.7-Gb/s Using Hybrid RZ-DQPSK and NRZ-DBPSK Formats over 16 x 80 km SSMF Spans and 4 Bandwidth-Managed ROADMs

We demonstrate for the first time the use of asymmetric-bandwidth interleaver based ROADM to transmit 42.7-Gb/s channels on a 50-GHz grid.