Electrochemically active aluminum can be cathodically deposited and anodically stripped from acidic mixtures of 1-methyl-3-ethylimidazolium chloride and aluminum chloride at room temperature.
We have demonstrated an external amplifier-modulator integrated with a cleaved-coupled-cavity injection laser on the same 1. 3-micron InGaAsP/InP laser chip.
A fully analog 0.25 micron BiCMOS tailbiting MAP decoder with a coding rate of 1/2 has been fabricated and tested.
An analog front-end CMOS chip for echo cancelling full-duplex digital transceivers working on twisted pairs has been fabricated.
This paper presents a broadband low-power baseband designed for zero-IF phased-array receiver. It can support 12 Gbps 256QAM and 17Gbps 32QAM.
This paper analyses the achievable signal quality of a novel system architecture for small cell units with integrated millimetre-wave wireless backhaul over realistic link lengths.
This work reports on a dielectrically isolated bipolar-CMOS-DMOS (BCDMOS) integrated-circuit technology that has been successfully developed for high-voltage applications (150-500 V).
Calculations show that electron states are not confined in the dashes in 1.55 mu m InAs/InP quantum dash-in-a-well laser structures.
Sub-band coding has recently been proposed as a technique for obtaining relatively good quality digital speech at a bit rate of 16 kb/s.
Adaptive antenna arrays have been the subject of numerous investigations.
