Angle-resolved photoemission spectroscopy (ARPES) measurements of the E(k||) band structure are reported for 1T-TaS2 and 2H-TaSe2 at temperatures where commensurate CDW's are well developed.
B ARRIER systems for the transmission of many telephone channels on a single metallic circuit have grown to be very important in the telephone network.
Numerous experiments indicate that the conduction process near the band edges of amorphous semiconductors differs from that in crystals.
Band-gap engineering is a powerful technique for the design of new semiconductor materials and devices.
Band-gap engineering is a powerful technique to design new semiconductor materials and devices.
Charge transport properties of vapor grown C-60 Single crystals are investigated in the temperature range from 5-300 K by field-effect transistor and space charge limited current measurements in va
T h e long-distance waveguide communication system will handle an extremely broad band extending perhaps from 40 to 80 kmc.
Spherulitic morphology in melt-solidified poly(Epsilon-caprolactone), Tm=64 degrees C, has been examined by light and electron microscopy over a growth temperature (Tc) range 25 degrees C to 58 Deg
This paper proposes a design methodology for international ISDNs.
Though IEEE 802.16 MAC protocols have been proposed to support quality of service (QoS) guarantees for various kinds of applications, they do not suggest how to allocate service bandwidth to fulfil
