Les systèmes de transmission optique monocanal à 100Gbit/s dont la dispersion n'est pas compensée en ligne ne respectent pas totalement la relation reliant le BER à la variance du bruit pour de gra
The binding energy of the 1s core level of the surface contaminant carbon on InGaAsP, InP and GaAs decreases 0.7 eV upon heating in vacuum to temperatures of 560 to 635C.
As part of an effort to elucidate the mechanism by which CO sub 2 gas purging inhibits localized corrosion of sputtered aluminum alloy films, pitting experiments were conducted in aqueous HC1 and H
Carbon doping of GaAs grown by molecular beam epitaxy (MBE) by a resistance- heated graphite filament has been demonstrated for the first time.
Carbon doping of GaAs grown by molecular beam epitaxy has been obtained for the first time by use of a heated graphite filament.
P-type InAlAs material is used in several microelectronic and optoelectronic devices such as heterojunction bipolar transistors (1) and laser (2).
We investigated the processing and properties of silica gels reinforced with carbon fibers to prevent cracking during drying and handling.
The novel life cycle assessment (LCA)-based carbon handprint indicator represents a potential carbon footprint reduction that producers/products create for customers who use the(ir) product instead
The carbon K-shell excitation spectra of gaseous cyclic hydrocarbons, both saturated (cycloprapane, cyclobutane, cyclopentane, cyclohexane) and unsaturated (cycloopentene, cyclohexene and cyclo-oct
The recent development of lithium rechargeable batteries results from the use of carbon materials as lithium reservoir at the negative electrode.
