X-ray photoemission and in-situ oxygen uptake studies have been performed on polyimide surfaces exposed to controlled ion etching, reactive metallization, or the two acting in concert.
High quality GaAs layers have been grown by chemical beam epitaxy using triethylgallium and arsine.
Full widths at half-maximum intensity of the (004) Bragg reflection peak as small as 24 arcs are obtained from InGaAs epilayers of 4-6 micrometer thick.
We report the growth study of InAs by chemical beam epitaxy.
We report the successful preparation by chemical beam epitaxy (CBE) and performance characteristics of Ga(0.47)In(0.53)As/InP double-heterostructure (DH) and multiquantum well (MQW) lasers emitting
The epitaxial growth and characterization of high quality GaAs using triethylgallium and arsine in the MBE system is efficiency of arsine, V/III ratio, and the growth temperature.
The growth of high purity GaAs by chemical beam using triethylgallium and arsine is reported.
An interference mirror for use near 1.55 micron wavelength was constructed using InP and lattice matched InGaAsP on an InP substrate with chemical beam epitaxy methods.
Chemical beam epitaxy (CBE) combines many important advantages of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MO_CVD).
Chemical beam epitaxy (CBE) combines many important advantages of molecular beam epitaxy (MBE) and organometallic chemical vapor deposition (OMCVD).
