A fully integrated single-ended output push-push oscillator is realized using an advanced 0.2 /spl mu/m SiGe HBT process.
An InGaAs photodetector for detection in the 1.0micron-1.5micron wavelength range has been integrated at the end of and above a ridge waveguide in InP.
We demonstrate direct modulation results on a 16-channel chirped multifrequency laser without a shared amplifier.
This paper describes the design and construction of a monolithic isolator, a two-port device designed to pass information across an isolated boundary.
Results of a monolithically integrated optical silicon receiver for applications in optical data transmission and in optical interconnects with wavelengths of 638 and 850 nm are presented.
This letter describes the successful monolithic integration of rubber stamped thin-film organic transistors with polymer-dispersed liquid crystals (PDLCs) to create a multi-pixel, flexible display
We present here numerical simulations of photo-diode performance when it is operated on the recently proposed Principle of Random Multiplication.
This work uses a single-scattering Monte Carlo simulation of electron-solid interactions to predict the effects of electron lithography damage in the gate oxide of MOSFETs with gate lengths of 0.5
We have used a positive trilevel resist structure on GaAs to verify our general purpose Monte Carlo calculations of electron beam lithography.
We have used a positive trilevel resist structure on GaAs to verify our general purpose calculations of electron beam lithography.
