An important step in the chemical vapor deposition (CVD) of aluminum from triisobutylaluminum (TIBA) is the reaction between TIBA (adsorbed from the gas phase) and the growing aluminum surface.
The chemistry of the Al polyimide interface is examined by XPS sputter profiling.
A bilayer metallization is presented in which tungsten selectively deposited by CVD covers all exposed aluminum surfaces.
We have studied aluminum implantation enhanced intermixing of GaAs-AlGaAs quantum well structures using low temperature photoluminescence.
Grating couplers in sputtered aluminum nitride, a piezoelectric material with low loss in the C band, are demonstrated.
We are evaluating aluminum nitride (AlN) substrates because of their favorable thermal properties.
Amorphous thin films with very low attenuation are grown by MO-PECVD. The modifications due to the annealing condition are subject of investigations.
Aluminum Oxide/Silicon Dioxide, DoubleInsulator, MOS Structure By J. T. CLEMENS, E. F. LABUDA, and C. N.
We have investigated the effects of aluminum incorporation on the structure and superconducting transition temperature of crystals of the high T sub c superconductor Ba sub 2 YCu sub 3 O sub 7 .
We have investigated the effect of aluminum incorporation on the structure and superconducting transition of single crystals of high T sub c cuprate perovskite superconductors.
