Addition of Nd, Tb, or Dy to amorphous Ti-O thin films is found to improve the dielectric properties of the films. Specifically, substitution of 10-30 at.
A series of amorphous molybdenum sulfides, MoS(2), Mo(2)S(5) and MoS(3), have been investigated as candidate non-aqueous storage battery electrodes.
Studies of the structural amorphous Si have provided a wealth of information on phase transitions and crystal growth. We will review the thermodynamic properties and melting transition.
Studies of the structural amorphous Si have provided a wealth of information on phase transitions and crystal growth. We will review the thermodynamic properties and melting transition.
The existence of 'surface type' superstructures at buried interfaces suggests a new type of electronic materials engineering.
The ability to epitaxially crystallize amorphous Si at low temperatures with ion beams has opened up some new dimensions in interface and segregation behavior.
Semiconductors can be made amorphous by ion bombardment processes such as ion implantation. The resulting amorphous layers on single crystal substrates have several novel features.
Semiconductors can be made amorphous by ion bombardment processes such as ion implantation. The resulting amorphous layers on single crystal substrates have several novel features.
We show that optical and electrical measurements on pentacene single crystals can be used to extract the density of states in the HOMO-LUMO bandgap.
We show that optical and electrical measurements on pentacene single crystals can be used to extract the density of states in the HOMO-LUMO bandgap.
