In this study we report on the micro-, And nanostructural, morphological and electrical properties of Ti(20 nm)/Cr(120 nm)/Al(50 nm) contacts to n-GaN by electron microscopy, X-ray diffraction and
The annealing behavior of Ba sub 2 YCu sub (3+x) O sub (7+y) films grown by coevaporation of BaF sub 2, Y and Cu on SrTiO sub 3 has been studied as a function of temperature.
The structural aspects and annealing behavior of induced damage by Ga sup + ion implantation of a GaAs single quantrum well are investigated by transmission electron microscopy.
P-type, Be-doped GaInNAs layers (1100 Angstrom thick) are grown on GaAs substrates by gas-source molecular beam epitaxy with a nitrogen radical beam source.
Low-temperature (250-310C) annealing was found to cause a large decrease in the resistivity of RF sputter-deposited thin (less than or equal to 500A) Permalloy films.
The observations were made with a high-resolution germanium spectrometer having a 20 deg FWHM field of view flown on high altitude balloons over Alice Springs, Australia.
This is a presentation for the publication that has been already cleared for external release.
The average amount of multipath fading, and the microwave radio transmission outage it causes, varies from month to month and from year to year.
We have examined the electrochemical reactions taking place at Ba sub 2 YCu sub 3 0 sub 7 and Cu0 in several aqueous media under anodic and open circuit conditions.
The report discusses the use of an electrochemical technique, termed anodic etching, to delineate electrically active defects and doping density differences in silicon wafers.
