T h e removal of surface oxides is an important step in the manufacture of electron devices.
We report the first evidence of lattice mismatch stain induced atomic reordering within a single crystalline epilayer in a film-substrate structure.
We show that surface sensitive forbidden Bragg reflections, such as 1/3 (422) and (110) in the f.c.c. system, can be used to probe quantitatively the roughness of buried interfaces.
We have examined the interfaces in Zr-silicate gate dielectrics grown on Si substrates using electron energy loss spectroscopy.
The atomic scale oxidation of the alpha-SiC(0001)3x3 surface is investigated by atom-resolved scanning tunneling microscopy, synchrotron-based core level photoemission spectroscopy and high-sensiti
Using high-resolution transmission electron microscopy we have studied atomic structure of interfaces between epitaxial thin films of metals, insulators or semiconductors on semiconductors.
There is a renewed interest in the investigations of chemisorption of Cu surfaces in an attempt to understand the formation of the Cu oxide.
An oxide-free heteroepitaxial bonding of InP-clad GaInAs quantum wells on Si showing an atomic-plane-thick reconstruction across the InP-Si interface and no degradation of the quantum wells lumines
As silicon-based transistors in integrated circuits grow smaller, the concentration of charge carriers generated by the introduction of impurity dopant atoms must steadily increase.
Oyxgen vacancies can act as n-type dopants in SrTiO3, allowing carrier mobilities in excess of 104 cm2/(Vs) at low temperatures.
